Innovation in 1T1C FRAM technologies for ultra high reliable mega density FRAM and future high density FRAM

Integrated Ferroelectrics

Volumn 81, Issue 1, 2006, Pages 77-88

  Kim, Kinam ^a   Lee, S Y ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

1T1C; 2 D capacitor; 3 D capacitor; ALD Ir; Capacitor etching; COB; Endurance; Ferroelectric capacitor; FRAM; MOCVD PZT; PZT scaling; Retention

Indexed keywords

CAPACITORS; ELECTRODES; ETCHING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RANDOM ACCESS STORAGE;

2-D CAPACITOR; 3-D CAPACITOR; FERROELECTRIC CAPACITOR; PZT SCALING; RETENTION;

FERROELECTRIC DEVICES;

EID: 33745857348     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580600657930     Document Type: Article

References (12)

1. Kinam Kim, Int. Symp. on Integated Ferroelectrics (Gyeongju, Korea, April 2004).
2. J. T. Evans and R. Womack, IEEE J. Solid State Circuit 23(5), 1171 (1988).
3. M. Gill, et al, ISSCC Tech. Dig. 202-204 (2002).
4. S. Tehrani, et al., Proc. IEEE, 91, 703-714, (2003).
5. H. H. Kim, et al., Tech. Dig. of VLSI Tech. 210-211 (2002).
6. T. S. Moise, et al., Tech. Dig. of IEDM 535-538 (2002).
7. H. Kanaya, et al., Tech. Dig. of VLSI Tech. 150-151 (2004).
8. H. J. Joo, et al., Tech. Dig. of VLSI Tech. 148-149 (2004).
9. B. J. Bae, et al., Int. Symp. on Integated Ferroelectrics (Shanghai, China, April 2005).
10. J. M. Benedetto, et al., J. Appl. Phys. 75, 460 (1994).
11. R. Moazzami, et al., Tech. Dig. of VLSI Tech. 61 (1991).
12. J. K. Lee, et al., Jpn. J. Appl. Phys. 41, 6690 (2002).