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Volumn 175, Issue 2, 2010, Pages 150-158
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Microstructural and optical characterization of germanium:indium tin oxide (Ge:ITO) nanocomposite films
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Author keywords
Germanium; Indium oxide; Metal oxide semiconductor structures; Quantum structures; Thin films
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Indexed keywords
CARRIER CONCENTRATION;
DEPOSITION;
ELECTRONIC PROPERTIES;
ENERGY GAP;
FILM PREPARATION;
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
INDIUM COMPOUNDS;
INFRARED DEVICES;
MOS DEVICES;
NANOCOMPOSITE FILMS;
NANOCOMPOSITES;
OXIDE FILMS;
OXIDE SEMICONDUCTORS;
SEMICONDUCTING INDIUM;
TIN OXIDES;
ABSORPTION ONSET;
ANNEAL TEMPERATURES;
GERMANIUMS (GE);
INTERFACIAL STRUCTURES;
METAL OXIDE SEMICONDUCTOR STRUCTURE;
MICROSTRUCTURAL CHARACTERIZATIONS;
QUANTUM STRUCTURE;
SEMICONDUCTOR PHASE;
SINGLE PHASIS;
THIN-FILMS;
THIN FILMS;
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EID: 77957857094
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mseb.2010.07.018 Document Type: Article |
Times cited : (12)
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References (41)
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