Well organized Si nanowires arrays synthesis for electronic devices.

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7761, Issue , 2010, Pages

  Lefeuvre, E ^a   Kim, K H ^a   He, Z B ^a   Maurice, J L ^a   Chatelet, M ^a   Pribat, D ^a,b   Kim, B S ^c   Cojocaru, C S ^a  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b Sungkyunkwan University   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

CVD growth; Electrodeposition.; Porous alumina; Silicon nanowires

Indexed keywords

ANODIZATIONS; CVD GROWTH; CVD REACTORS; ELECTRICAL BEHAVIORS; ELECTRODEPOSITED COPPER; ELECTRONIC DEVICE; GROWTH PROCESS; HIGH-DENSITY ARRAYS; HOT WIRE CHEMICAL VAPOR DEPOSITION; POROUS ALUMINA; POROUS ANODIC ALUMINA; SEM AND TEM; SI NANOWIRE; SILICON NANOWIRES;

ANODIC OXIDATION; CARBON NANOTUBES; CATALYSTS; ELECTRIC WIRE; ELECTRODEPOSITION; ELECTRON DEVICES; GRAPHENE; NANOWIRES; POROUS SILICON;

CHEMICAL VAPOR DEPOSITION;

EID: 77957854790     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.863923     Document Type: Conference Paper

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