Rhodium and silicon system: I. Glassy metallic alloy formation

Nanotechnology

Volumn 21, Issue 36, 2010, Pages

  Marot, L ^a   Schoch, R ^a   Steiner, R ^a   Meyer, E ^a  

^a UNIVERSITY OF BASEL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC CONCENTRATION; CHEMICAL BONDING STATE; CODEPOSITION; CORE LEVELS; CRYSTALLINITIES; HIGH DENSITY; METALLIC ALLOYS; NEGATIVE SHIFT; POSITIVE SHIFT; RELAXATION EFFECT; ROOM TEMPERATURE; SEM; SILICON CONTENTS; SILICON SUBSTRATES; VALENCE ORBITALS; XRD; AFM; COVALENT CHARACTER; GLASSY STATE; HOLE FORMATION; INTER-DIFFUSION; INTERFACIAL LAYER; OXIDIZED SILICON WAFERS; SAMPLE PREPARATION; SILICIDE FORMATION; XPS;

BINDING ENERGY; CERIUM ALLOYS; CHEMICAL BONDS; DIFFRACTION; HOLOGRAPHIC INTERFEROMETRY; NUCLEAR ENERGY; POTENTIAL ENERGY; RHODIUM; SILICON; X RAY DIFFRACTION; DEPTH PROFILING; FILM PREPARATION; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; SILICON ALLOYS; SILICON OXIDES; SILICON WAFERS; SUBSTRATES;

SILICON ALLOYS; RHODIUM COMPOUNDS;

EID: 77957852670     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/36/365706     Document Type: Article

References (37)

1. Muraka S P 1983 Silicides for VLSI Application (New York: Academic)
2. Lepselter M P, Fiory A T and Ravindra N M 2008 J. Electron. Mater. 37 403
3. Andrews J M and Lepselter M P 1970 Solid-State Electron. 13 1011
4. Coe D J, Rhoderick E H, Gerzon P H and Tinsley A W 1974 Inst. Phys. Conf. Ser. 22 74
5. Psaras P A, Thompson R D and Tu K M 1985 Appl. Phys. Lett. 47 250
6. Dydik V V, Zakharov A I, Krivitskii V P, Narmonev A G, Senkevich A I and Yupko L M 1982 Ser. Fiz. 46 802-6
7. Labich S, Kohl A and Taglauer E 1998 J. Chem. Phys. 109 2052-5
8. Marot L, De Temmerman G, Thommen V, Mathys D and Oelhafen P 2008 Surf. Coat. Technol. 202 2837
9. Doniach S and Sunjic M 1970 J. Phys. C: Solid State Phys. 3 285
10. Shirley D A 1972 Phys. Rev. B 5 4709
11. Hesse R, Chassé T and Szargan R 1999 Fresenius J. Anal. Chem. 365 48
12. Scofield J H 1976 J. Electron Spectrosc. Relat. Phenom. 8 129
13. Hufner S 1979 Topics in Applied Physics vol 27 (Berlin: Springer)
14. Weaver J H, Moruzzi V L and Schmidt F A 1981 Phys. Rev. B 23 2916
15. Rubloff G W 1983 Surf. Sci. 132 268
16. Grunthaner P J, Grunthaner F J and Madhukar A 1982 J. Vac. Sci. Technol. 21 637
17. Grunthaner P J, Grunthaner F J and Madhukar A 1982 J. Vac. Sci. Technol. 20 680
18. Chabal Y J, Franciosi A, Weaver J H, Rowe J E and Poate J M 1982 J. Vac. Sci. Technol. 21 624
19. Schmid P E, Ho P S, Fiill H and Rubloff G W 1981 J. Vac. Sci. Technol. 18 937
20. Ho P S and Rubloff G W 1982 Thin Solid Films 89 433
21. Grunthaner P J, Grunthaner F J and Madhukar A 1983 Physica B+C 117 831-3
22. Franciosi A, Weaver J H and Schmidt F A 1982 Phys. Rev. B 26 546
23. Hara S and Ohdomari I 1988 Phys. Rev. B 38 7554-7
24. Hüfner S, Wertheim G K and Buchanan D N E 1974 Solid State Commun. 14 1173-6
25. Egert B and Panzner G 1984 Phys. Rev. B 29 2091-101
26. Moruzzi V L, Janak J F and Williams A R 1978 Calculated Electronic Properties of Metals (New York: Pergamon) p 145
27. Riley J D, Ley L, Azoulay J and Terakura K 1979 Phys. Rev. B 20 776-83
28. Nagel S R, Fisher G B and Tauc J 1976 Phys. Rev. B 13 3284-9
29. Polk D 1972 Acta Med. 20 485
30. Pettrovich E V, Smimov Yu P, Zykov V S, Grushko A I, Sumbaev O L, Band IM and Trzhaskovskaya MB 1971 Zh. Eksp. Teor. Fiz. 61 1756
31. Pettrovich E V, Smimov Yu P, Zykov V S, Grushko A I, Sumbaev O L, Band I M and Trzhaskovskaya M B 1972 Sov. Phys. - JETP 34 935
32. Doniach S 1970 Phys. Rev. B 10 3898-905
33. Moruzzi V L, Oelhafen P and Williams A R 1983 Phys. Rev. B 27 7194-8
34. Schellenberg L, Jorda J L and Muller J 1985 J. Less-Common Metals 109 261-74
35. Tanaka K, Saito T, Suzuki K and Hasegawa R 1985 Phys. Rev. B 32 6853-60
36. Bisi O and Calandra C 1981 J. Phys. C: Solid State Phys. 14 5479-94
37. Wetzel P, Pirri C, Peruchetti J C, Bolmont D and Gewinner G 1987 Phys. Rev. B 35 5880-3