Giant dielectric-permittivity property and relevant mechanism of Bi 2/3Cu3Ti4O12 ceramics

Materials Chemistry and Physics

Volumn 124, Issue 2-3, 2010, Pages 1100-1104

  Tan, Y Q ^a   Zhang, J L ^a   Hao, W T ^a   Chen, G ^a   Su, W B ^a   Wang, C L ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

Ceramics; Dielectric properties; Microstructure; Oxides

Indexed keywords

CERAMICS; COMPLEX IMPEDANCE; CRYSTALLINE STRUCTURE; DIELECTRIC DISPERSION; ELECTRICAL PROPERTY; ELECTRODE POLARIZATIONS; HIGH FREQUENCY; INTERNAL BARRIER LAYER CAPACITANCE EFFECTS; LOW FREQUENCY; LOW FREQUENCY REGIONS; PERMITTIVITY VALUES; ROOM TEMPERATURE; SCHOTTKY BARRIERS; SEMICONDUCTING GRAINS; SINTERING TEMPERATURES;

DIELECTRIC RELAXATION; ELECTRIC PROPERTIES; ELECTROCHEMICAL ELECTRODES; GRAIN BOUNDARIES; MICROSTRUCTURE; PERMITTIVITY; SCHOTTKY BARRIER DIODES; SINTERING;

CERAMIC MATERIALS;

EID: 77957847678     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2010.08.041     Document Type: Article

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