I-V characteristics of Au-GaN Schottky junction

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 21, Issue 4, 2000, Pages 369-372

  Lin, Zhaojun ^a   Zhang, Taiping ^a   Wu, Guoying ^a   Wang, Wei ^a   Yan, Guizhen ^a   Sun, Dianzhao ^a   Zhang, Jianping ^a   Zhang, Guoyi ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; GOLD; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR JUNCTIONS;

GALLIUM NITRIDE; SCHOTTKY JUNCTIONS;

GALLIUM COMPOUNDS;

EID: 0034168464     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)