Negative thermal expansion due to negative area compressibility in TlGaSe2 semiconductor with layered crystalline structure

Journal of Applied Physics

Volumn 108, Issue 6, 2010, Pages

  Seyidov, Mirhasan Yu ^a,b   Suleymanov, Rauf A ^a,b  

^a GEBZE TECHNICAL UNIVERSITY   (Turkey)

^b INSTITUTE OF PHYSICS   (Azerbaijan)

Author keywords

[No Author keywords available]

Indexed keywords

AREA COMPRESSIBILITY; EXPERIMENTAL DATA; EXTERNAL ELECTRIC FIELD; LAYERED CRYSTALLINE; LAYERED STRUCTURES; NEGATIVE THERMAL EXPANSION; PHONON SPECTRUM; TEMPERATURE DEPENDENCE; THERMAL-ANNEALING;

BORON; BUOYANCY; COMPRESSIBILITY; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; CRYSTALS; ELECTRIC FIELDS; NITRIDES; THERMAL STRESS;

THERMAL EXPANSION;

EID: 77957730072     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3486211     Document Type: Article

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