Thermal expansion and memory effect in the ferroelectric-semiconductor TlGaSe2

Journal of Applied Physics

Volumn 106, Issue 2, 2009, Pages

  Seyidov, Mirhasan Yu ^a,b   Suleymanov, Rauf A ^a,b   Yakar, Emin ^a  

^a GEBZE TECHNICAL UNIVERSITY   (Turkey)

^b INSTITUTE OF PHYSICS   (Azerbaijan)

Author keywords

[No Author keywords available]

Indexed keywords

INCOMMENSURATE PHASE; INTERNAL ELECTRIC FIELDS; LINEAR EXPANSION COEFFICIENT; MEMORY EFFECTS; SEMICONDUCTOR CRYSTALS; THERMAL-ANNEALING;

ANNEALING; ELECTRIC FIELDS; FERROELECTRICITY; THERMAL STRESS;

THERMAL EXPANSION;

EID: 68249135349     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3182825     Document Type: Article

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