C-band electromodulation in silicon-germanium ring and linear devices

Applied Physics Letters

Volumn 97, Issue 13, 2010, Pages

  Lim, Peng Huei ^a   Cai, Jingnan ^a   Ishikawa, Yasuhiko ^a   Wada, Kazumi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION CHANGES; ELECTRO-ABSORPTION; ELECTROMODULATION; ELECTROREFRACTION; FIELD-EFFECT DEVICES; HIGH SPEED; LINEAR DEVICES; LOW POWER; MODULATION DEPTH; OPTICAL INTERFERENCE; PROOF OF CONCEPT; SILICON GERMANIUM; SINUSOIDAL INPUT;

GERMANIUM; SILICON ALLOYS; WAVEGUIDES;

OPTICAL SWITCHES;

EID: 77957673278     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3496469     Document Type: Article

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