Top-contact organic transistors and complementary circuits fabricated using high-resolution silicon stencil masks

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2010, Pages 175-176

  Ante, F ^a   Letzkus, F ^b   Butschke, J ^b   Zschieschang, U ^a   Burghartz, J N ^b   Kern, K ^a,c   Klauk, H ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b Institut fur Mikroelektronik Stuttgart   (Germany)

^c EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BACK GATES; BOTTOM-CONTACT; CHANNEL LENGTH; COMPLEMENTARY CIRCUITS; ELEVATED TEMPERATURE; HIGH MOBILITY; HIGH RESOLUTION; HIGH THROUGHPUT; LATERAL DIMENSION; MAXIMUM OPERATING FREQUENCY; ORGANIC TFTS; ORGANIC THIN FILM TRANSISTORS; ORGANIC TRANSISTOR; PENTACENES; PROCESS TEMPERATURE; SELF-ALIGNED; SHORT CHANNELS; SMALL-MOLECULE ORGANIC SEMICONDUCTOR; SOURCE AND DRAINS; STENCIL MASKS; TOP CONTACT;

FIELD EFFECT TRANSISTORS; INK; INK JET PRINTERS; INK JET PRINTING; PHASE TRANSITIONS; PHOTOLITHOGRAPHY; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON NITRIDE; SOLVENTS; THIN FILM TRANSISTORS;

FABRICATION;

EID: 77957609006     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2010.5551894     Document Type: Conference Paper

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