Gate-all-around silicon nanowire MOSFETs and circuits

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2010, Pages 269-272

  Sleight, J W ^a   Bangsaruntip, S ^a   Majumdar, A ^a   Cohen, G M ^a   Zhang, Y ^a   Engelmann, S U ^a   Fuller, N C M ^a   Gignac, L M ^a   Mittal, S ^a   Newbury, J S ^a   Frank, M M ^a   Chang, J ^a   Guillom, M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT PERFORMANCE; GATE STACKS; GATE-ALL-AROUND; HYDROGEN ANNEALING; MOSFETS; OFF-CURRENT; OXIDATION PROCESS; SELF-HEATING; SHORT-CHANNEL EFFECT; SI NANOWIRE; SILICON NANOWIRE MOSFETS; STAGE RING OSCILLATORS; SUPPLY VOLTAGES;

MOSFET DEVICES; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS;

OSCILLATORS (ELECTRONIC);

EID: 77957562735     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2010.5551965     Document Type: Conference Paper

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