High pressure X-ray diffraction study of ReS2

Journal of Physics and Chemistry of Solids

Volumn 71, Issue 11, 2010, Pages 1571-1575

  Hou, Dongbin ^a   Ma, Yanzhang ^a   Du, Jianguo ^a,b   Yan, Jinyuan ^c   Ji, Cheng ^a   Zhu, Hongyang ^a  

^a Department of Electrical and Computer Engineering   (United States)

^b INSTITUTE OF GEOPHYSICS   (China)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

A. Semiconductors; C. High pressure; C. X ray diffraction; D. Crystal structure; D. Phase transitions

Indexed keywords

A. SEMICONDUCTORS; AMBIENT PRESSURES; BULK MODULUS; C. HIGH PRESSURE; D. CRYSTAL STRUCTURE; D. PHASE TRANSITIONS; DIAMOND-ANVIL CELL; EXPERIMENTAL DATA; HEXAGONAL LATTICE; HIGH PRESSURE; HIGH-PRESSURE BEHAVIOR; HIGH-PRESSURE PHASE; IN-SITU SYNCHROTRONS; INTRA-LAYER; NEW HIGH; PRESSURE DERIVATIVES; ROOM TEMPERATURE; SECOND ORDERS; SPACE GROUPS; SULFUR ATOMS; THIRD-ORDER; TRICLINIC PHASE; UNIT CELLS; VAN DER WAALS INTERACTIONS; X-RAY DIFFRACTION STUDIES;

CRYSTAL STRUCTURE; DIFFRACTION; HIGH PRESSURE ENGINEERING; RHENIUM; SINGLE CRYSTALS; SULFUR; VAN DER WAALS FORCES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAYS;

PHASE TRANSITIONS;

EID: 77957324838     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2010.08.002     Document Type: Article

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