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Journal of Materials Science: Materials in Electronics

Volumn 20, Issue SUPPL. 1, 2009, Pages

In-plane anisotropic electrical and optical properties of gold-doped rhenium disulphide

(5) Liang, C H a Tiong, K K a Huang, Y S b Dumcenco, D b Ho, C H c

a NATIONAL TAIWAN OCEAN UNIVERSITY (Taiwan)

b NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

c NATIONAL DONG HWA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC OPTICAL PROPERTIES; BAND EDGE; CHEMICAL VAPOURS; DOPED SAMPLE; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL CONDUCTIVITY; HALL EFFECT MEASUREMENT; IN-PLANE; INCIDENT LIGHT BEAMS; LAYER CRYSTALS; P-TYPE; PHOTOCONDUCTIVITY SPECTRUM; ROOM TEMPERATURE; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; TRANSPORT AGENT;

ANISOTROPY; ELECTRIC PROPERTIES; HALL EFFECT; IODINE; MAGNETIC FIELD EFFECTS; OPTICAL CONDUCTIVITY; PHOTOCONDUCTIVITY; RHENIUM; THERMAL EFFECTS;

OPTICAL PROPERTIES;

EID: 71149113837 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-008-9685-2 Document Type: Conference Paper

Times cited : (8)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.