Phase transition related barrier height in Ga-Si Schottky diode

Journal of Materials Science Letters

Volumn 16, Issue 18, 1997, Pages 1509-1511

  Patel, K D ^a   Srivastava, R ^a  

^a SARDAR PATEL UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; GALLIUM; INTERFACES (MATERIALS); PHASE TRANSITIONS; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SOLIDIFICATION;

BARRIER HEIGHT; BOLTZMANN CONSTANT; KEITHLEY ELECTROMETER; SOLIDIFICATION TEMPERATURE;

SCHOTTKY BARRIER DIODES;

EID: 0031234535     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1018571024237     Document Type: Article

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