Clustering and layering of in adatoms on low and high index silicon surfaces: A comparative study

Surface Science

Volumn 604, Issue 21-22, 2010, Pages 1972-1977

  Kuyyalil, Jithesh ^b   Govind, ^a   Kumar, Mahesh ^a   Shivaprasad, S M ^b  

^a NATIONAL PHYSICAL LABORATORY   (India)

^b JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH   (India)

Author keywords

Adsorption; AES; Clustering; Desorption; High Index Si (5 5 12); Indium; LEED; Nanowires; Quantum size effects; Step edge barrier

Indexed keywords

AES; CLUSTERING; HIGH INDEX; LEED; QUANTUM SIZE EFFECTS; STEP-EDGE;

ADATOMS; ADSORPTION; AUGER ELECTRON SPECTROSCOPY; ELECTRONIC PROPERTIES; INDIUM; LOW ENERGY ELECTRON DIFFRACTION; NANOWIRES; SIZE DETERMINATION; SURFACE PHENOMENA; THERMAL DESORPTION;

SILICON;

EID: 77957142066     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2010.08.006     Document Type: Article

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