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Volumn 2003-January, Issue , 2003, Pages 239-242
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A new comprehensive SRAM soft-effor simulation based on 3D device simulation incorporating neutron nuclear reactions
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Author keywords
Circuit simulation; CMOS technology; Discrete event simulation; Electronic equipment testing; National electric code; Neutrons; Particle beams; Random access memory; Sampling methods; Silicon
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Indexed keywords
CMOS INTEGRATED CIRCUITS;
DISCRETE EVENT SIMULATION;
ELECTRIC POWER SYSTEMS;
ELECTRONIC EQUIPMENT;
ELECTRONIC EQUIPMENT TESTING;
EQUIPMENT TESTING;
HIGH ELECTRON MOBILITY TRANSISTORS;
MICROPROCESSOR CHIPS;
NEUTRONS;
NUCLEAR REACTIONS;
OSCILLATORS (ELECTRONIC);
PARTICLE BEAMS;
RADIATION HARDENING;
RANDOM ACCESS STORAGE;
SEMICONDUCTOR DEVICES;
SILICON;
STATIC RANDOM ACCESS STORAGE;
3D DEVICE SIMULATION;
CMOS TECHNOLOGY;
NATIONAL ELECTRIC CODE;
POWER SUPPLY VOLTAGE;
QUANTITATIVE EVALUATION;
RANDOM ACCESS MEMORY;
SAMPLING METHOD;
THREE-DIMENSIONAL DEVICES;
CIRCUIT SIMULATION;
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EID: 77957013742
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/SISPAD.2003.1233681 Document Type: Conference Paper |
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Times cited : (2)
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References (16)
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