Neutron soft-error simulation for semiconductor memory devices

NEC Research and Development

Volumn 43, Issue 2, 2002, Pages 146-152

  Kawakami, Yukiya ^a   Yamamoto, Yoshifumi ^a   Tanaka, Katsuhiko ^a   Hane, Masami ^a   Watanabe, Yukinobu ^a  

^a Silicon Systems Research Lab   (Japan)

Author keywords

3D device simulation; Charge collection model; Cosmic ray neutron; Critical charge; DRAM; ECC (error check and correct); LA150; MBE (multiple bit error); QMD (quantum molecular dynamics); SER (soft error rate); Soft error

Indexed keywords

BIT ERROR RATE; CALCULATIONS; COSMIC RAYS; DYNAMIC RANDOM ACCESS STORAGE; MONTE CARLO METHODS; NEUTRONS; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTOR STORAGE;

CHARGE COLLECTION MODEL; MULTIPLE-BIT ERROR; NEUTRON SOFTWARE-ERROR SIMULATION; NEUTRON-SILICON-NUCLEUS-REACTION DATA; QUANTUM MOLECULAR DYNAMICS; SEMICONDUCTOR MEMORY DEVICE;

COMPUTER SIMULATION;

EID: 0036544641     PISSN: 0547051X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (23)

1. Extended abstracts (The 61st autumn meeting)