Temperature dependant flash memory erase transient simulation (Part I)

Microelectronic Engineering

Volumn 87, Issue 11, 2010, Pages 2050-2052

  Wolfson, S ^a   Ho, Fat D ^b  

^a Redstone Technical Test Center   (United States)

^b UNIVERSITY OF ALABAMA IN HUNTSVILLE   (United States)

Author keywords

Flash memory; MOS memory circuits; Semiconductor device models; Simulation; Temperature

Indexed keywords

AMBIENT TEMPERATURES; EFFECTS OF TEMPERATURE; FLOATING GATES; INDEPENDENT VARIABLES; MEMORY CIRCUITS; MOS MEMORY CIRCUITS; PHYSICS-BASED; POISSON'S EQUATION; SIMULATION; SIMULATION TEMPERATURE; SIMULATION-BASED; TEMPERATURE DEPENDENT; THRESHOLD VOLTAGE SHIFTS; TRANSIENT SIMULATION;

COMPUTER SIMULATION; POISSON EQUATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR SWITCHES; TEMPERATURE; THRESHOLD VOLTAGE;

FLASH MEMORY;

EID: 77955509894     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.12.078     Document Type: Article

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