Effects of RF power and pressure on performance of HF-PECVD silicon thin-film solar cells

Thin Solid Films

Volumn 518, Issue 24, 2010, Pages 7233-7235

  Lien, Shui Yang ^a   Wang, Chao Chun ^b   Shen, Chau Te ^a   Ou, Yu Chih ^a   Cho, Yun Shao ^a   Weng, Ko Wei ^a   Chao, Ching Hsun ^a   Chen, Chia Fu ^a   Wuu, Dong Sing ^a  

^a MINGDAO UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

Amorphous silicon films; Plasma enhanced chemical vapor deposition; Thin film solar cells

Indexed keywords

A-SI:H; ABSORBER LAYERS; AMORPHOUS SILICON FILM; DEPOSITION CONDITIONS; DEPOSITION PARAMETERS; EXCITATION FREQUENCY; HF-PECVD; HIGH FREQUENCY HF; HIGH RATE; HYDROGENATED AMORPHOUS SILICON (A-SI:H) FILMS; RF-POWER; THIN-FILM SILICON SOLAR CELLS; THIN-FILM SOLAR CELLS;

AMORPHOUS FILMS; DEPOSITION; ELECTRONIC PROPERTIES; FILM PREPARATION; METALLIC FILMS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON SOLAR CELLS; SOLAR CELLS; SUPERCONDUCTING FILMS; THIN FILMS; VAPOR DEPOSITION;

AMORPHOUS SILICON;

EID: 77956880305     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.04.083     Document Type: Conference Paper

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