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Volumn 312, Issue 21, 2010, Pages 3235-3237

Droplet epitaxy of zinc-blende GaN quantum dots

(7) Schupp, T a Meisch, T b Neuschl, B b Feneberg, M b Thonke, K b Lischka, K a As, D J a

Author keywords

A1. Atomic force microscopy; A1. Growth models; A1. Nanostructures; A1. Reflection high energy electron diffraction; A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

A1. ATOMIC FORCE MICROSCOPY; A1. NANOSTRUCTURES; A1. REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; A3. MOLECULAR BEAM EPITAXY; B1. NITRIDES; GROWTH MODELS;

ATOMIC FORCE MICROSCOPY; CONDENSATION; DROP FORMATION; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ENERGY PHYSICS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOSTRUCTURES; PHOTOLUMINESCENCE SPECTROSCOPY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR QUANTUM DOTS; ZINC; ZINC SULFIDE;

CRYSTAL STRUCTURE;

EID: 77956880114 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.07.049 Document Type: Article

Times cited : (20)

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