High-temperature dielectric response in pulsed laser deposited Bi 1.5 Zn1.0 Nb1.5 O7 thin films

Journal of Applied Physics

Volumn 108, Issue 5, 2010, Pages

  Singh, Jitendra ^a   Kalghatgi, A T ^a   Parui, Jayanta ^b   Krupanidhi, S B ^b  

^a BHARAT ELECTRONICS LIMITED   (India)

^b INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AC CONDUCTION; CRYSTALLINITIES; DIELECTRIC CONSTANTS; DIELECTRIC DISPERSION; DIELECTRIC RESPONSE; DIFFERENT FREQUENCY; FREQUENCY WINDOWS; HIGH FREQUENCY; HIGH TEMPERATURE; LOW FREQUENCY; LOW FREQUENCY REGIONS; NYQUIST PLOTS; POWER LAW EXPONENT; PREFERRED ORIENTATIONS; PULSED LASER; PULSED LASER ABLATION; PYROCHLORES; REAL PART; TANGENT LOSS; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; TRAPPED CHARGE;

ABLATION; DIELECTRIC MATERIALS; GRAIN BOUNDARIES; LATTICE CONSTANTS; OXYGEN; OXYGEN VACANCIES; PERMITTIVITY; PLATINUM; PULSED LASER DEPOSITION; PULSED LASERS; SILICON COMPOUNDS; THIN FILMS; VAPOR DEPOSITION; ZINC;

ACTIVATION ENERGY;

EID: 77956790958     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3457335     Document Type: Article

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