Low-temperature dielectric relaxation in the pyrochlore (Bi 3/4Zn1/4)2(Zn1/4Ta 3/4)2O7 compound

Applied Physics Letters

Volumn 80, Issue 25, 2002, Pages 4807-4809

  Ang, Chen ^a   Yu, Zhi ^a   Youn, H J ^a   Randall, C A ^a   Bhalla, A S ^a   Cross, L E ^a   Nino, J ^a   Lanagan, M ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARRHENIUS LAW; DC BIAS; DEBYE MODELS; DIELECTRIC BEHAVIOR; DIELECTRIC PEAKS; LOW TEMPERATURES; MATRIX; POTENTIAL MINIMA; PYROCHLORES; RELAXATION PEAK; RELAXATION RATES; WIDE FREQUENCY RANGE;

DIELECTRIC RELAXATION; ZINC;

BISMUTH COMPOUNDS;

EID: 79958210847     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1486045     Document Type: Article

References (31)

1. H. Kagata, T. Inoue, J. Kato, I. Kameyama, and T. Ishizaki, Jpn. J. Appl. Phys., Part 1 31, 3152 (1992). jjb JAPNDE 0021-4922
2. S. Y. Cho, H. J. Youn, D. W. Kim, T. G. Kim, and K. S. Hong, J. Am. Ceram. Soc. 81, 3038 (1998). jac JACTAW 0002-7820
3. J. Nino, M. T. Lanagan, and C. A. Randall, J. Mater. Res. 16, 1460 (2001); jmr JMREEE 0884-2914
4. J. Appl. Phys. 89, 4512 (2001); jap JAPIAU 0021-8979
5. I. Levin T. G. Amos, J. Nino, T. A. Vanderah, C. A. Randall, and M. T. Lanagan (unpublished).
6. H. J. Youn, C. A. Randall, A. Chen, and M. T. Lanagan, J. Mater. Res. (to be published).
7. G. I. Golovshchikova, V. A. Isupov, A. G. Tutov, I. E. Myl'nikova, P. A. Nikitina, and O. I. Tulinova, Sov. Phys. Solid State 14, 2539 (1973). sps SPSSA7 0038-5654
8. D. Bernard, J. Pannetier, and J. Luscas, Ferroelectrics 21, 429 (1978); fer FEROA8 0015-0193
9. M. F. Yan, H. C. Ling, and W. W. Rhodes, J. Am. Ceram. Soc. 73, 1106 (1990); jac JACTAW 0002-7820
10. J. Champarnaud-Mesjard, M. Manier, and B. Frit, J. Alloys Compd. 188, 174 (1992). jal JALCEU 0925-8388
11. B. Li, X. Wang, and Y. Mo, Inorganic Dielectric Materials (Science and Technology, Shanghai, 1986), pp. 153-168.
12. D. Liu, Y. Liu, S. Q. H., and X. Yao, J. Am. Ceram. Soc. 76, 2129 (1993); jac JACTAW 0002-7820
13. X. Wang, H. Wang, and X. Yao, 80, 2745 (1997); jac JACTAW 0002-7820
14. H. Wang, D. Zhang, X. Wang, and X. Yao, J. Mater. Res. 14, 546 (1999). jmr JMREEE 0884-2914
15. D. Cann, C. A. Randall, and T. R. Shrout, Solid State Commun. 100, 529 (1996); ssc SSCOA4 0038-1098
16. A. Mergen and W. E. Lee, Mater. Res. Bull. 32, 175 (1997); mrb MRBUAC 0025-5408
17. Y. A. Yee, K. R. Han, and H. T. Kim, J. Mater. Sci. 34, 4699 (1999); jmt JMTSAS 0022-2461
18. M. Valant and P. K. Davies, J. Am. Ceram. Soc. 83, 147 (2000). jac JACTAW 0002-7820
19. W. Ren, S. Trolier-Mckinstry, C. A. Randall, and T. R. Shrout, J. Appl. Phys. 89, 767 (2001). jap JAPIAU 0021-8979
20. A. Chen, Y. Zhi, J. Hemberger, P. Lunkenheimer, and A. Loidl, Phys. Rev. B 59, 6661 (1999); prb PRBMDO 0163-1829
21. -59, 6665 (1999); prb PRBMDO 0163-1829
22. -59, 6670 (1999); prb PRBMDO 0163-1829
23. A. Chen and Y. Zhi, Phys. Rev. B 61, 11363 (2000). prb PRBMDO 0163-1829
24. Y. Zhi, A. Chen, and L. E. Cross, Appl. Phys. Lett. 74, 3044 (1999). apl APPLAB 0003-6951
25. K. S. Cole and R. H. Cole, J. Chem. Phys. 9, 341 (1941). jcp JCPSA6 0021-9606
26. A. Chen, Y. Zhi, H. J. Youn, C. Randall, A. S. Bhalla, L. E. Cross, and M. Lanagan (unpublished).
27. A. Chen, A. S. Bhalla, and L. E. Cross, Phys. Rev. B 64, 184104 (2001). prb PRBMDO 0163-1829
28. A. Chen and Y. Zhi, J. Appl. Phys. 91, 1487 (2002). jap JAPIAU 0021-8979
29. N. N. Kolpakova, M. Wiesner, G. Kugel, and P. Bourson, J. Phys. 6, 2787 (1994).
30. A. Chen, R. Guo, A. S. Bhalla, and L. E. Cross, J. Appl. Phys. 87, 7452 (2000); jap JAPIAU 0021-8979
31. A. Chen, L. E. Cross, R. Guo, and A. S. Bhalla, Appl. Phys. Lett. 77, 732 (2000). apl APPLAB 0003-6951