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Bulletin of the Russian Academy of Sciences: Physics

Volumn 74, Issue 7, 2010, Pages 991-993

Selective growth of single-wall carbon nanotubes and the fabrication of devices on their basis

(10) Kononenko, O V a Matveev, V N a Kasumov, Yu A a Khodos, I I a Matveev, D V b Bozhko, S I b Volkov, V T a Knyazev, M A a Firsov, A A a Il'Yun, A I a

a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS (Russian Federation)

b INSTITUTE OF SOLID STATE PHYSICS (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT POTENTIAL DIFFERENCE; HIGH RESOLUTION; KELVIN MODES; OXIDIZED SILICON SUBSTRATES; PD ELECTRODES; SCANNING PROBE MICROSCOPE; SCANNING PROBES; SELECTIVE GROWTH; SINGLE WALL NANOTUBES; SINGLE-WALL CARBON NANOTUBES;

ACETYLENE; CARBON NANOTUBES; ELECTRODES; PALLADIUM; PROBES; SCANNING; SILICON OXIDES;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 77956633896 PISSN: 10628738 EISSN: None Source Type: Journal
DOI: 10.3103/S106287381007021X Document Type: Article

Times cited : (3)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.