Treating the Case of Incurable Hysteresis in VO2

Future Trends in Microelectronics: From Nanophotonics to Sensors and Energy

Volumn , Issue , 2010, Pages 395-409

  Gurvitch, M ^a   Luryi, S ^a,b   Polyakov, A ^a   Shabalov, A ^a  

^a STONY BROOK UNIVERSITY   (United States)

^b Stony Brook University   (United States)

Author keywords

Ferromagnetic material; Hysteresis; Infrared visualization; Magnetic transitions; Phase transitions

Indexed keywords

EID: 77956624071     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1002/9780470649343.ch33     Document Type: Chapter

References (8)

1. M. Gurvitch, S. Luryi, A. Polyakov, and A. Shabalov, "Non-hysteretic behavior inside the hysteresis loop of VO2 and its possible application in infrared imaging," J. Appl. Phys. 106, 104504 (2009).
2. F. J. Morin, "Oxides that show a metal-to-insulator transition at the Neel temperature," Phys. Rev. Lett. 3, 34 (1959); N. Mort, Metal-Insulator Transitions, London: Taylor & Francis, 1997.
3. C. N. Bergland and H. J. Guggenheim, "Electronic properties of V02 near the semiconductor-metal transition," Phys. Rev. 185, 1022 (1969).
4. R. S. Scott and G. E. Frederics, "Model for infrared detection by a metalsemiconductor phase transition," Infrared Phys. 16, 619 (1976).
5. V. Yu. Zerov, Yu. V. Kulikov, V. N. Leonov, V. G. Malyarov, I. A. Khrebtov, and I. I. Shaganov, "Features of the operation of a bolometer based on a vanadium dioxide film in a temperature interval that includes a phase transition," J. Opt. Technol. 66, 387 (1999).
6. B. E. Cole, R. E. Higashi, and R. A. Wood, "Monolithic two-dimensional arrays of micromachined microstructures for infrared applications," Proc. IEEE 86, 1679(1998).
7. T. G. Lanskaya, I. A. Merkulov, and F. A. Chudnovskii, "Hysteresis effects at the semiconductor-metal phase transition in vanadium oxides," Sov. Phys. Solid State 20, 193 (1978), and a number of more recent papers treating hysteresis in VO2.
8. M. Gurvitch, S. Luryi, A. Polyakov, et al, "V02 films with strong semiconductor to metal phase transition prepared by the precursor oxidation process," J. Appl. Phys. 102, 033504 (2007).