Dependence of DGMOSFET 1/f noise on transistor geometry and technology parameters

2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings

Volumn , Issue , 2006, Pages 573-576

  Mišić, Mirjana Videnović ^a   Jevtić, Milan M ^b  

^a UNIVERSITY OF NOVI SAD   (Serbia)

^b UNIVERSITY OF BELGRADE   (Serbia)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; AC CURRENTS; CURRENT NOISE; DG MOSFETS; LOAD RESISTANCES; MOS TRANSISTORS; MOS-FET; NOISE SOURCE; OXIDE THICKNESS; SENSITIVITY TO VARIATIONS; SMALL SIGNAL; SOURCE/DRAIN JUNCTIONS; TECHNOLOGY PARAMETERS; THEORETICAL STUDY;

MICROELECTRONICS; MOSFET DEVICES; SENSITIVITY ANALYSIS; SPECTRAL DENSITY; TRANSISTOR TRANSISTOR LOGIC CIRCUITS;

TRANSISTORS;

EID: 77956543346     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICMEL.2006.1651021     Document Type: Conference Paper

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