Novel approach for precise control of oxide thickness

IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings

Volumn , Issue , 2001, Pages 451-454

  Saki, K ^a   Kawase, S ^a   Shiozawa, J ^a   Yamamoto, A ^a   Mikata, Y ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; GATES (TRANSISTOR); MOSFET DEVICES; PRESSURE EFFECTS; REGRESSION ANALYSIS; THERMAL EFFECTS;

GATE OXIDATION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0035161461     PISSN: 1523553X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Structural dependence of dielectric breakdown in ultra-thin gate oxides and its relationship to soft breakdown modes and devices failure
2. General relationship for the thermal oxidation of silicon