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Volumn 312, Issue 20, 2010, Pages 3009-3013

Preparation and the growth mechanism of zinc blende structure tin sulfide films by successive ionic layer adsorption and reaction

(5) Gao, Chao a Shen, Honglie a Wu, Tianru a Zhang, Lei a Jiang, Feng a

a NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS (China)

Author keywords

A1. Growth models; A3. Successive ionic layer adsorption and reaction; B1. Sulfides; B2. Semiconducting materials

Indexed keywords

B1. SULFIDES; CATION ADSORPTION; COMPLEX IONS; DISTRIBUTION OF CATIONS; GROWTH MECHANISMS; GROWTH MODELS; NOVEL STRUCTURES; PRECURSOR SOLUTIONS; SEMICONDUCTING MATERIALS; SNS FILMS; SUBSTRATE SURFACE; SUCCESSIVE IONIC LAYER ADSORPTION AND REACTIONS; TIN SULFIDE; TIN SULFIDE FILMS; ZINCBLENDE STRUCTURES;

ADSORPTION; POSITIVE IONS; SEMICONDUCTOR GROWTH; SODIUM CHLORIDE; SUBSTRATES; TIN; TITANIUM COMPOUNDS; ZINC; ZINC SULFIDE;

FILM PREPARATION;

EID: 77956405389 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.07.001 Document Type: Article

Times cited : (12)

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