Growth of horizontally aligned single-walled carbon nanotubes on anisotropically etched silicon substrate

Nanoscale

Volumn 2, Issue 9, 2010, Pages 1708-1714

  Orofeo, Carlo M ^a   Ago, Hiroki ^a,b   Ikuta, Tatsuya ^a   Takahasi, Koji ^a   Tsuji, Masaharu ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNED GROWTH; ALIGNED NANOTUBES; ALIGNED SINGLE-WALLED CARBON NANOTUBES; DEGREE OF ALIGNMENTS; DIRECT INTEGRATION; GAS FLOWS; NANOELECTRONIC APPLICATIONS; NANOTUBE ALIGNMENT; SI SUBSTRATES; SI(1 0 0); SILICON SUBSTRATES; TEMPLATED; THERMAL OXIDATION;

ALIGNMENT; CARBON NANOTUBES; NANOELECTRONICS; SILICON; SILICON COMPOUNDS; SILICON OXIDES;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

CARBON NANOTUBE; SILICON; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; ELECTRONICS; OXIDATION REDUCTION REACTION; TEMPERATURE; ULTRASTRUCTURE;

ELECTRONICS; NANOTUBES, CARBON; OXIDATION-REDUCTION; SILICON; SILICON DIOXIDE; TEMPERATURE;

EID: 77956366036     PISSN: 20403364     EISSN: 20403372     Source Type: Journal    
DOI: 10.1039/c0nr00170h     Document Type: Article

References (29)

1. R. H. Baughman A. A. Zakhidov W. A. de Heer Science 2002 297 787
2. C. Kocabas N. Pimparkar O. Yesilyurt S. J. Kang M. A. Alam J. A. Rogers Nano Lett. 2007 7 1195
3. S. J. Kang C. Kocabas T. Ozel M. Shim N. Pimparkar M. A. Alam S. V. Rotkin J. A. Rogers Nat. Nanotechnol. 2007 2 230
4. P. N. Nirmalraj P. E. Lyons S. De J. N. Coleman J. J. Boland Nano Lett. 2009 9 3890
5. J. Kong H. T. Soh A. M. Cassell C. F. Quate H. Dai Nature 1998 395 878
6. E. S. Snow J. P. Navak P. M. Campbell D. Park Appl. Phys. Lett. 2003 82 2145
7. H. Ago K. Nakamura K. Ikeda N. Uehara N. Ishigami M. Tsuji Chem. Phys. Lett. 2005 408 433
8. A. Ismach L. Segev E. Wachtel E. Joselevich Angew. Chem., Int. Ed. 2004 43 6140
9. S. Han X. Liu C. J. Zhou J. Am. Chem. Soc. 2005 127 5294
10. C. Kocabas S. H. Hur A. Gaur M. A. Meitl M. Shim J. A. Rogers Small 2005 1 1110
11. H. Ago K. Imamoto N. Ishigami R. Ohdo K. Ikeda M. Tsuji Appl. Phys. Lett. 2007 90 123112
12. L. Ding D. Yuan J. Liu J. Am. Chem. Soc. 2008 130 5428
13. C. Kocabas S. Kang T. Ozel M. Shim J. A. Rogers J. Phys. Chem. C 2007 111 17879
14. N. Ishigami H. Ago K. Imamoto M. Tsuji K. Iakoubovskii N. Minami J. Am. Chem. Soc. 2008 130 9918
15. A. Ural Y. Li H. Dai Appl. Phys. Lett. 2002 81 3464
16. S. Huang X. Cai J. Liu J. Am. Chem. Soc. 2003 125 5636
17. S. Huang M. Woodson R. Smalley J. Liu Nano Lett. 2004 4 1025
18. Z. Yu S. Li P. J. Burke Chem. Mater. 2004 16 3414
19. L. X. Zheng M. J. O'Connell S. K. Doorn X. Z. Liao Y. H. Zhao E. A. Akhadov M. A. Hoffbauer B. J. Roop Q. X. Jia R. C. Dye et al Nat. Mater. 2004 3 673
20. A. Reina M. Hofmann D. Zhu J. Kong J. Phys. Chem. C 2007 111 7292
21. Y. Qian S. Huang F. Gao Q. Cai L. Zhang W. Hu J. Phys. Chem. C 2009 113 6983
22. L. Zheng B. C. Satishkumar P. Gao Q. Zhang J. Phys. Chem. C 2009 113 10896
23. N. Yoshihara H. Ago K. Imamoto M. Tsuji T. Ikuta K. Takahashi J. Phys. Chem. C 2009 113 8030
24. C. M. Orofeo H. Ago N. Yoshihara M. Tsuji Appl. Phys. Lett. 2009 94 53113
25. T. Kamimura K. Matsumoto Appl. Phys. Express 2009 2 15005
26. K. Bean IEEE Trans. Electron Devices 1978 25 1185 1193
27. S. M. Sze, Semiconductor Devices: Physics and Technology in Lithography and Etching, John Wiley & Sons, 2nd edn, New York, 2001, pp 428-429
28. N. Gelblinger A. Ismach E. Joselevich Nat. Nanotechnol. 2008 3 195
29. B. Zhang G. Hong B. Peng J. Zhang W. Choi J. M. Kim J. Choi Z. Liu J. Phys. Chem. C 2009 113 5341