Epitaxial growth and magnetic properties of Fe3 O4 films on TiN buffered Si(001), Si(110), and Si(111) substrates

Applied Physics Letters

Volumn 97, Issue 9, 2010, Pages

  Xiang, Hua ^a   Shi, Fengyuan ^a   Rzchowski, Mark S ^b   Voyles, Paul M ^a   Chang, Y Austin ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b Wisconsin Electric Machines and Power Electronics Consortium   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FIELD; COLUMNAR GRAIN; DC REACTIVE SPUTTERING; IN-PLANE MAGNETIC ANISOTROPY; ROOM TEMPERATURE GROWTH; SI(0 0 1); SI(110); SI(111) SUBSTRATE; SINGLE PHASE; SUBSTRATE TEMPERATURE; TIN BUFFERS;

DEPOSITION; EPITAXIAL FILMS; EPITAXIAL GROWTH; MAGNETIC ANISOTROPY; SILICON; SUBSTRATES; TITANIUM NITRIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77956360563     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3484278     Document Type: Article

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