Broadly tunable high-power InAs/GaAs quantum-dot external cavity diode lasers

Optics Express

Volumn 18, Issue 18, 2010, Pages 19438-19443

  Fedorova, Ksenia A ^a   Cataluna, Maria Ana ^a   Krestnikov, Igor ^b   Livshits, Daniil ^b   Rafailov, Edik U ^a  

^a UNIVERSITY OF DUNDEE   (United Kingdom)

^b INNOLUME GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

PUMPING (LASER); SEMICONDUCTOR QUANTUM DOTS; TUNING;

DIODE LASERS; EXTERNAL CAVITY; EXTERNAL-CAVITY DIODE LASER; HIGH-POWER; INAS/GAAS; LASER CONFIGURATION; MAXIMUM OUTPUT POWER; OPERATION CONDITIONS; OUTPUT POWER; PUMP CURRENT; QUANTUM DOTS; SIDE MODE SUPPRESSION RATIOS; TUNABILITIES; TUNING RANGES; WAVEGUIDE DESIGN;

QUANTUM DOT LASERS;

GALLIUM; GALLIUM ARSENIDE; INDIUM; INDIUM ARSENIDE; ORGANOARSENIC DERIVATIVE; QUANTUM DOT;

ARTICLE; CHEMISTRY; COMPUTER AIDED DESIGN; DIODE LASER; EQUIPMENT DESIGN; LIGHT; OPTICS; SEMICONDUCTOR;

ARSENICALS; COMPUTER-AIDED DESIGN; EQUIPMENT DESIGN; GALLIUM; INDIUM; LASERS, SEMICONDUCTOR; LIGHT; OPTICS AND PHOTONICS; QUANTUM DOTS; SEMICONDUCTORS;

EID: 77956357289     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.18.019438     Document Type: Article

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