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Volumn 405, Issue 19, 2010, Pages 4087-4091
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Effect of indium concentration on the electrical properties of InSe alloy
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Author keywords
Chalcogenides; Hopping; Localized states; Semiconductors
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Indexed keywords
AS-DEPOSITED FILMS;
CONDUCTIVITY MECHANISMS;
ELECTRICAL CONDUCTIVITY;
ELECTRICAL PROPERTY;
GLASS SUBSTRATES;
HIGH TEMPERATURE;
HOPPING;
IN-BAND;
INDIUM CONCENTRATION;
LOCALIZED STATE;
LOCALIZED STATES;
LOW TEMPERATURES;
MATRIX;
POLYCRYSTALLINE;
ROOM TEMPERATURE;
SEM;
SEMICONDUCTORS;
TEMPERATURE DEPENDENCE;
TEMPERATURE RANGE;
THERMAL ACTIVATION ENERGIES;
THERMAL EVAPORATION TECHNIQUE;
VARIABLE RANGE HOPPING;
ACTIVATION ENERGY;
AMORPHOUS FILMS;
CERIUM ALLOYS;
CHALCOGENIDES;
ELECTRIC CONDUCTIVITY;
INDIUM;
INDIUM ALLOYS;
PHASE TRANSITIONS;
PHOTOGRAPHY;
SCANNING ELECTRON MICROSCOPY;
SUBSTRATES;
THERMAL EVAPORATION;
THIN FILMS;
X RAY DIFFRACTION;
X RAY DIFFRACTION ANALYSIS;
SEMICONDUCTING SELENIUM COMPOUNDS;
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EID: 77956267166
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physb.2010.06.006 Document Type: Article |
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Times cited : (22)
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References (35)
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