Coexistence of indirect and direct optical transitions, refractive indices, and oscillator parameters in TIGaS2, TIGaSe2, and TIInS2 Layered Single Crystals

Journal of the Korean Physical Society

Volumn 57, Issue 1, 2010, Pages 164-168

  Gasanly, N M ^a  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Absorption edge; Energy band gap; Refractive index; Semiconductors

Indexed keywords

EID: 77956220246     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.57.164     Document Type: Article

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