Light-induced memory in TlInS2 incommensurate ferroelectric

Journal of Luminescence

Volumn 87, Issue , 2000, Pages 664-666

  Uchiki, Hisao ^a   Kanazawa, Daisuke ^a   Mamedov, Nazim ^a,b   Iida, Seishi ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

^b Osaka Prefecture University   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; FERROELECTRIC MATERIALS; IRRADIATION; LASER APPLICATIONS; PHASE TRANSITIONS; PHOTOLUMINESCENCE; TEMPERATURE;

BAND GAP LASER TREATMENT; INCOMMENSURATE PARAELECTRIC PHASE TRANSITION; LIGHT INDUCED MEMORY; PHOTOLUMINESCENCE SPECTRA;

THALLIUM COMPOUNDS;

EID: 0033737457     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(99)00348-8     Document Type: Article

References (7)

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