Impact of nonequilibrium phonons on the electron dynamics in terahertz quantum cascade lasers

Applied Physics Letters

Volumn 97, Issue 3, 2010, Pages

  Iotti, Rita Claudia ^a   Rossi, Fausto ^a   Vitiello, Miriam Serena ^b   Scamarcio, Gaetano ^b   Mahler, Lukas ^c   Tredicucci, Alessandro ^c  

^a POLITECNICO DI TORINO   (Italy)

^b UNIVERSITY OF BARI   (Italy)

^c INFM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC MODE; EFFECTIVE TEMPERATURE; ELECTRON DYNAMICS; ELECTRONIC SUBSYSTEMS; GLOBAL KINETICS; LO PHONONS; MEASURED DATA; MONTE CARLO; NON EQUILIBRIUM; NON-EQUILIBRIUM ELECTRONS; NONEQUILIBRIUM PHONONS; PHONON EFFECTS; QUANTUM-CASCADE DEVICES; SIMULATED RESULTS; SUB-BANDS; TERA HERTZ; TERAHERTZ QUANTUM-CASCADE LASERS;

OPTICAL INSTRUMENTS; OPTOELECTRONIC DEVICES; POPULATION STATISTICS; QUANTUM CASCADE LASERS;

PHONONS;

EID: 77956198328     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3464977     Document Type: Article

References (18)

1. J. Faist, F. Capasso, D. L. Sivco, C. Sirtori, A. L. Hutchinson, and A. Y. Cho, Science SCIEAS 0036-8075 264, 553 (1994). 10.1126/science.264.5158.553
2. R. Köhler, R. C. Iotti, A. Tredicucci, and F. Rossi, Appl. Phys. Lett. APPLAB 0003-6951 79, 3920 (2001). 10.1063/1.1423777
3. It might be useful to stress that, while the term "hot" may suggest a thermalized Bose-type form of the nonequilibrium phonon distribution, this is usually not the case. The same applies to the electron distribution function as well.
4. G. Paulavičius, V. Mitin, and M. A. Stroscio, J. Appl. Phys. JAPIAU 0021-8979 84, 3459 (1998). 10.1063/1.368520
5. F. Compagnone, M. Manenti, A. Di Carlo, and P. Lugli, Physica B PHYBE3 0921-4526 314, 336 (2002). 10.1016/S0921-4526(01)01448-X
6. C. Jirauschek and P. Lugli, J. Comput. Electron. JCEOA7 1569-8025 7, 436 (2008). 10.1007/s10825-008-0232-4
7. V. Spagnolo, G. Scamarcio, M. Troccoli, F. Capasso, C. Gmachl, A. M. Sergent, A. L. Hutchinson, D. L. Sivco, and A. Y. Cho, Appl. Phys. Lett. APPLAB 0003-6951 80, 4303 (2002). 10.1063/1.1481186
8. V. Spagnolo, M. S. Vitiello, G. Scamarcio, B. S. Williams, S. Kumar, Q. Hu, and J. L. Reno, J. Phys.: Conf. Ser. JPCSDZ 1742-6588 92, 012018 (2007). 10.1088/1742-6596/92/1/012018
9. G. Scamarcio, M. S. Vitiello, V. Spagnolo, S. Kumar, B. Williams, and Q. Hu, Physica E (Amsterdam) PELNFM 1386-9477 40, 1780 (2008). 10.1016/j.physe. 2007.09.168
10. M. S. Vitiello, G. Scamarcio, V. Spagnolo, B. S. Williams, S. Kumar, Q. Hu, and J. L. Reno, Appl. Phys. Lett. APPLAB 0003-6951 86, 111115 (2005). 10.1063/1.1886266
11. R. C. Iotti and F. Rossi, Phys. Rev. Lett. PRLTAO 0031-9007 87, 146603 (2001). 10.1103/PhysRevLett.87.146603
12. R. C. Iotti and F. Rossi, Rep. Prog. Phys. RPPHAG 0034-4885 68, 2533 (2005). 10.1088/0034-4885/68/11/R02
13. M. S. Vitiello, G. Scamarcio, V. Spagnolo, J. Alton, S. Barbieri, C. Worral, H. E. Beere, D. A. Ritchie, and C. Sirtori, Appl. Phys. Lett. APPLAB 0003-6951 89, 021111 (2006). 10.1063/1.2220546
14. J. Shah, Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures (Springer, Berlin, 1998).
15. S. Kumar, B. S. Williams, S. Kohen, Q. Hu, and J. L. Reno, Appl. Phys. Lett. APPLAB 0003-6951 84, 2494 (2004). 10.1063/1.1695099
16. S. M. Goodnick and P. Lugli, Phys. Rev. B PLRBAQ 0556-2805 37, 2578 (1988). 10.1103/PhysRevB.37.2578
17. Scattering mechanisms not included in our model-like, e.g., interface roughness and carrier impurity scattering may affect the transport properties of real devices and have to be considered if one is interested in a strictly quantitative analysis. Such processes, however, do not significantly modify the trend of the current-voltage characteristics since, opposite to carrier-LO phonon scattering, they are threshold-less mechanisms, and therefore, poorly dependent on the applied bias. They are, moreover, strongly device dependent and do not represent by themselves an energy dissipation channel.
18. J. T. Lü and C. Cao, Appl. Phys. Lett. APPLAB 0003-6951 88, 061119 (2006). 10.1063/1.2172225