Mixed-phase solidification of thin Si films on SiO2

Journal of Crystal Growth

Volumn 312, Issue 19, 2010, Pages 2775-2778

  Im, James S ^a   Chahal, Monica ^a   Van Der Wilt, P C ^a   Chung, U J ^a   Ganot, G S ^a   Chitu, A M ^a   Kobayashi, Naoyuki ^b   Ohmori, K ^b   Limanov, A B ^a  

^a Columbia University ^*  (United States)

^b JAPAN STEEL WORKS LTD   (Japan)

Author keywords

A1. Defects; A1. Recrystallization; A2. Growth from melt; B2. Semiconducting silicon; B3. Field effect transistors; B3. Solar cells

Indexed keywords

A1. DEFECTS; B2. SEMICONDUCTING SILICON; B3.SOLAR CELL; GROWTH FROM MELTS; RECRYSTALLIZATIONS;

AMORPHOUS MATERIALS; DEFECTS; FIELD EFFECT TRANSISTORS; GRAIN BOUNDARIES; PHASE INTERFACES; POLYSILICON; RECRYSTALLIZATION (METALLURGY); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON OXIDES; SOLAR CELLS; SOLIDIFICATION;

SEMICONDUCTING SILICON;

EID: 77956184609     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.05.037     Document Type: Article

References (21)

1. MRS Symposia Proceedings, Vol. 1, Part 4, 1981.
2. M.A. Bosch, and R.A. Lemons Phys. Rev. Lett. 47 1981 1151
3. W.G. Hawkins, and D.K. Biegelsen Appl. Phys. Lett. 42 1983 358
4. K.A. Jackson, and D.A. Kurtze J. Cryst. Growth 71 1985 385
5. M.W. Geis, Henry I. Smith, B.-Y. Tsaur, John C.C. Fan, D.J. Silversmith, and R.W. Mountain J. Electrochem. Soc. 129 1982 2812
6. J.S. Im, and Robert S. Sposili MRS Bull. 21 3 1996 39
7. I. Gordon, L. Carnel, D. Van Gestel, G. Beaucarne, and J. Poortmans Thin Solid Films 516 2008 6984
8. P.C. van der Wilt, B.A. Turk, A.B. Limanov, A.M. Chitu, and James S. Im Proc. SPIE 6106 2006
9. M. Ieong, Kathryn W. Guarini, Victor Chan, Kerry Bernstein, Rajiv Joshi, Jakub Kedzierski, and Wilfried Haenscd Three Dimensional CMOS Devices and Integrated Circuits 2003 Institute of Electrical and Electronics Engineers Inc. San Jose, CA, United States
10. R.S. Sposili, and J.S. Im Appl. Phys. Lett. 69 1996 2864
11. J.S. Im, M.A. Crowder, R.S. Sposili, J.P. Leonard, H.J. Kim, J.H. Yoon, V.V. Gupta, H. Jin Song, and H.S. Cho Phys. Status Solidi (a) 166 1998 603
12. G. Beaucarne, S. Bourdais, A. Slaoui, and J. Poortmans Appl. Phys. A 79 2004 469
13. B. Chalmers Principles of Solidification 1964 John Wiley & Sons, Inc. New York
14. Bruce Chalmers, J.W. Christian, T.B. Massalski (Eds.), Grain-boundary melting, in: Progress in Materials Science, 1972 (Chapter 5).
15. D.K. Biegelsen, W.G. Hawkins, L.E. Fennel, N.M. Johnson, M.D. Moyer, Silicon On-Insulator: Its Technology and Applications, in: S. Furukawa (Ed.), 1985, p.129.
16. J.S. Im, H. Tomita, and C.V. Thompson Appl. Phys. Lett. 51 1987 685
17. Loren Pfeiffer, A.E. Gelman, K.A. Jackson, K.W. West, and J.L. Batstone Appl. Phys. Lett. 51 1987 1256
18. E. Pihana, A. Slaouia, and C. Maurice J. Cryst. Growth 305 2007 88
19. H. Baumgart, F. Phillip, S. Ramesh, B. Khan, A. Martinez, E. Arnold, in: Material Research Society Symposium Proceedings, vol. 53, 1986, p.65.
20. D.P. Vu, M. Haond, D. Bensahel, and M. Dupuy J. Appl. Phys. 54 1983 437
21. B. Pécz, L. Dobos, D. Panknin, W. Skorupa, C. Lioutas, and N. Vouroutzis Appl. Surf. Sci. 242 2005 185