Effect of Si-C bond formation in 20 keV C60 bombardment of Si

Surface and Interface Analysis

Volumn 43, Issue 1-2, 2011, Pages 123-125

  Krantzman, Kristin D ^a   Garrison, Barbara J ^b  

^a Department of Teacher Education and Department of Sociology and Anthropology   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

C60+; carbon; molecular dynamics simulations; silicon; ToF SIMS

Indexed keywords

BACK-SCATTERED; C ATOMS; C60+; FLUENCES; MD SIMULATION; MOLECULAR DYNAMICS SIMULATIONS; SI ATOMS; SI-C BOND; SI-C BOND FORMATION; SPUTTER-DEPTH PROFILING; SUCCESSIVE IMPACTS; TOF SIMS;

ATOMS; DEPTH PROFILING; MOLECULAR DYNAMICS; PROJECTILES; SECONDARY ION MASS SPECTROMETRY;

SILICON;

EID: 77956168908     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.3438     Document Type: Conference Paper

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