Temperature-dependent study of the band-edge excitonic transitions of Cu2ZnSiS4 single crystals by polarization-dependent piezoreflectance

Journal of Alloys and Compounds

Volumn 506, Issue 1, 2010, Pages 46-50

  Levcenco, S ^a,b   Dumcenco, D ^a,b   Huang, Y S ^a   Arushanov, E ^b   Tezlevan, V ^b   Tiong, K K ^c   Du, C H ^d  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b INSTITUTE OF APPLIED PHYSICS   (Moldova)

^c NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^d TAMKANG UNIVERSITY   (Taiwan)

Author keywords

Crystal growth; Optical properties; Optical spectroscopy; Semiconductors

Indexed keywords

AS-GROWN; BAND EDGE; BASAL PLANES; BOSE-EINSTEIN EQUATIONS; BROADENING PARAMETERS; COUPLING CONSTANTS; CRYSTAL-FIELD SPLITTING; EXCITONIC TRANSITION; INTERBAND EXCITONIC TRANSITIONS; LINE SHAPE; LONGITUDINAL OPTICAL PHONONS; OPTICAL SPECTROSCOPY; PIEZOREFLECTANCE; SEMICONDUCTORS; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; TEMPERATURE VARIATION; TRANSITION ENERGY;

CRYSTAL GROWTH; CRYSTALLIZATION; EXCITONS; OPTICAL PROPERTIES; POLARIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STATISTICAL MECHANICS; TEMPERATURE DISTRIBUTION;

SINGLE CRYSTALS;

EID: 77956094988     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.07.027     Document Type: Article

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