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Volumn 2, Issue , 1997, Pages 1000-1005
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Switching characteristics of an asymmetrical complementary 4H-SiC gate turn-off (GTO) thyristor
a a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
BIPOLAR TRANSISTORS;
COMPUTER AIDED NETWORK ANALYSIS;
CURRENT DENSITY;
GATES (TRANSISTOR);
MOSFET DEVICES;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DEVICE STRUCTURES;
FORWARD BLOCKING VOLTAGE;
SOFTWARE PACKAGE PSPICE;
THYRISTORS;
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EID: 0031341391
PISSN: 01972618
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (6)
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References (12)
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