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Volumn 2, Issue , 1997, Pages 1000-1005

Switching characteristics of an asymmetrical complementary 4H-SiC gate turn-off (GTO) thyristor

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; COMPUTER AIDED NETWORK ANALYSIS; CURRENT DENSITY; GATES (TRANSISTOR); MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0031341391     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (6)

References (12)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.