Coherent control of Rydberg states in silicon

Nature

Volumn 465, Issue 7301, 2010, Pages 1057-1061

  Greenland, P T ^a   Lynch, S A ^a   Van Der Meer, A F G ^b   Murdin, B N ^c   Pidgeon, C R ^d   Redlich, B ^b   Vinh, N Q ^b,e   Aeppli, G ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b FOM INSTITUTE FOR PLASMA PHYSICS RIJNHUIZEN   (Netherlands)

^c UNIVERSITY OF SURREY   (United Kingdom)

^d HERIOT WATT UNIVERSITY   (United Kingdom)

^e UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

CHEMICAL COMPOSITION; ELECTRICAL CONDUCTIVITY; ELECTROMAGNETIC METHOD; FUNDAMENTAL PARTICLE; LASER METHOD; QUANTUM MECHANICS; SILICON;

ARTICLE; CHEMICAL COMPOSITION; HUMAN; NUCLEAR MAGNETIC RESONANCE SPECTROSCOPY; PRIORITY JOURNAL; SEMICONDUCTOR; SOLID STATE LASER; TERAHERTZ RADIATION;

EID: 77953934259     PISSN: 00280836     EISSN: 14764687     Source Type: Journal    
DOI: 10.1038/nature09112     Document Type: Article

References (25)

1. Haeffner, H., Roos, C. F. & Blatt, R. Quantum computing with trapped ions. Phys. Rep. 469, 155-203 (2008).
2. Urban, E. et al. Observation of Rydberg blockade between two atoms. Nature Phys. 5, 110-113 (2009).
3. Gaëtan, A. et al. Observation of collective excitation of two individual atoms in the Rydberg blockade regime. Nature Phys. 5, 115-118 (2009).
4. Schwarzschild, B. Experiments show blockading interaction of Rydberg atoms over long distances. Phys. Today 62, 15-18 (2009).
5. Stoneham, A. M., Fisher, A. J. & Greenland, P. T. Optically driven silicon-based quantum gates with potential for high-temperature operation. J. Phys. Condens. Matter 15, L447-L451 (2003).
6. Abella, I. D., Kurnit, N. A. & Hartmann, S. R. Photon echoes. Phys. Rev. 141, 391-405 (1966).
7. Allen, L. & Eberly, J. H. Optical Resonance and Two-level Atoms 195-220 (Dover, 1987).
8. Hahn, E. L. Spin echoes. Phys. Rev. 80, 580-594 (1950).
9. Raitzsch, U. et al. Echo experiments in a strongly interacting Rydberg gas. Phys. Rev. Lett. 100, 013002 (2008).
10. Tokura, Y. & Nagaosa, N. Orbital physics in transition-metal oxides. Science 288, 462-468 (2000).
11. Zrenner, A. et al. Coherent properties of a two-level system based on a quantum dot photodiode. Nature 418, 612-614 (2002).
12. Kroner, M. et al. Rabi splitting and ac-Stark shift of a charged exciton. Appl. Phys. Lett. 92, 031108 (2008).
13. Kohn, W. & Luttinger, J. M. Theory of donor states in silicon. Phys. Rev. 98, 915-922 (1955).
14. 28Si: the importance of inhomogeneous isotope broadening. Phys. Rev. Lett. 90, 186402 (2003).
15. Vinh, N. Q. et al. Silicon as a model ion trap: time domain measurements of donor Rydberg states. Proc. Natl Acad. Sci. USA 105, 10649-10653 (2008).
16. Tsyplenkov, V. V., Demidov, E. V., Kovalevski, K. A. & Shastin, V. N. Relaxation of excited donor states in silicon with emission of intervalley phonons. Semiconductors 42, 1016-1022 (2007).
17. Oepts, D. van der Meer, A. F. G. & van Amersfoort, P. W. The free electron laser facility FELIX. Infrared Phys. Technol. 36, 297-308 (1995).
18. Shoemaker, R. L. in Laser and Coherence Spectroscopy (ed. Steinfeld, J. I.) 197-372 (Plenum, 1978).
19. Agarwal, G. S. Quantum statistical theory of optical resonance phenomena in fluctuating laser fields. Phys. Rev. A 18, 1490-1506 (1978).
20. Larsen, D. M. Concentration broadening of absorption lines from shallow donors in multivalley bulk semiconductors. Phys Rev B 67, 165204 (2003).
21. Jagannath, C., Grabowski, Z. W. & Ramdas, A. K. Linewidths of the electronic excitation spectra of donors in silicon. Phys. Rev. B 23, 2082-2098 (1981).
22. Brown, R. A. & Rodriguez, S. Low-temperature recombination of electrons and donors in n-type germanium and silicon. Phys. Rev. 153, 890-900 (1967).
23. Ruess, F. J. et al. Towards atomic-scale device fabrication in silicon using scanning probe microscopy. Nano Lett. 4, 1969-1973 (2004).
24. Petta, J. R. et al. Coherent manipulation of electron spins in semiconductor quantum dots. Science 309, 2180-2184 (2005).
25. Knippels, G. M. H. et al. Generation and complete electric-field characterization of intense ultrashort tunable far-infrared laser pulses. Phys. Rev. Lett. 83, 1578-1581 (1999).