Formation and Annihilation of Cu conductive filament in the nonpolar resistive switching Cu/ZrO2:Cu/Pt ReRAM

ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems

Volumn , Issue , 2010, Pages 1-4

  Liu, Ming ^a   Liu, Qi ^a   Long, Shibing ^a   Guan, Weihua ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE FILAMENTS; DATA RETENTION; ELECTROCHEMICAL REACTIONS; LOW-RESISTANCE STATE; METALLIC FILAMENTS; NANO SCALE; NON-POLAR; RESISTANCE RATIO; RESISTIVE MEMORIES; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SWITCHING CHARACTERISTICS; TEMPERATURE DEPENDENT;

ELECTROFORMING; FABRICS; PLATINUM; SWITCHING SYSTEMS; THERMAL EFFECTS; ZIRCONIUM ALLOYS;

FILAMENTS (LAMP);

EID: 77955997441     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCAS.2010.5537156     Document Type: Conference Paper

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