A 200 GHz monolithic integrated power amplifier in metamorphic HEMT technology

IEEE Microwave and Wireless Components Letters

Volumn 19, Issue 6, 2009, Pages 410-412

  Kallfass, I ^a   Pahl, P ^b   Massler, H ^a   Leuther, A ^a   Tessmann, A ^a   Koch, S ^c   Zwick, T ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b UNIVERSITY OF KARLSRUHE   (Germany)

^c Sony Deutschland GmbH   (Germany)

Author keywords

G band; mHEMT; millimeter wave field effect transistor (FET) integrated circuits (ICs); millimeter wave power amplification; Monolithic microwave integrated circuits (MMICs)

Indexed keywords

FREQUENCY RANGES; G-BAND; GATE LENGTH; HIGH-RESOLUTION IMAGING; INTEGRATED POWER AMPLIFIERS; LINEAR GAIN; METAMORPHIC HEMT; METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; MHEMT; MILLIMETER-WAVE FIELD EFFECT TRANSISTOR (FET) INTEGRATED CIRCUITS (ICS); MILLIMETER-WAVE POWER AMPLIFICATION; OUTPUT STAGES; PARALLEL TRANSISTORS; SATURATED OUTPUT POWER;

AMPLIFICATION; COMMUNICATION SYSTEMS; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUITS; MESFET DEVICES; MICROWAVE CIRCUITS; MICROWAVE INTEGRATED CIRCUITS; MICROWAVES; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; POWER AMPLIFIERS; RADAR IMAGING; WAVE POWER;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 67650427125     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2009.2020042     Document Type: Article

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