SCOPUS 정보 검색 플랫폼

Volumn 108, Issue 2, 2010, Pages

A method for measuring in-plane unidirectional electrical properties in a wide band-gap semiconductor using a Brillouin scattering method

(3) Yanagitani, Takahiko a Sano, Hiroyuki b Matsukawa, Mami b

a NAGOYA INSTITUTE OF TECHNOLOGY (Japan)

b DOSHISHA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC VELOCITY; ACOUSTIC VELOCITY DATA; CONTACT ELECTRODES; DEGREE OF COUPLING; ELECTRICAL PROPERTY; EXTREME CONDITIONS; GIGAHERTZ FREQUENCIES; GOOD CORRELATIONS; HIGH PRESSURE; HIGH TEMPERATURE; IN-PLANE; IN-PLANE RESISTIVITY; MICROSCOPIC DISTRIBUTION; NON-CONTACT MEASUREMENT TECHNIQUE; PHYSICAL CONTACTS; RESISTIVITY DISTRIBUTIONS; RESISTIVITY VALUES; WIDE-BAND-GAP SEMICONDUCTOR; ZNO CRYSTALS;

ACOUSTIC WAVE VELOCITY; ACOUSTIC WAVE VELOCITY MEASUREMENT; BRILLOUIN SCATTERING; ELECTROMECHANICAL COUPLING; ELECTROMECHANICAL DEVICES; RADIATION DAMAGE; ULTRASONICS; ZINC OXIDE;

ACOUSTIC WAVE SCATTERING;

EID: 77955803963 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3448203 Document Type: Article

Times cited : (5)

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