Quantitative determination of the clustered silicon concentration in substoichiometric silicon oxide layer

Applied Physics Letters

Volumn 87, Issue 4, 2005, Pages

  Spinella, Corrado ^a   Bongiorno, Corrado ^a   Nicotra, Giuseppe ^a   Rimini, Emanuele ^a   Muscar̀, Anna ^b   Coffa, Salvo ^b  

^a CNR   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FUNCTION; ELECTRON ENERGY; OXIDE FILMS; SILICON CONCENTRATION;

ANNEALING; ELECTRIC POTENTIAL; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONS; NITROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; STOICHIOMETRY; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; VOLUME FRACTION;

SILICA;

EID: 23744505364     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1999839     Document Type: Article

References (9)

1. S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chan, and D. Buchanan, Proceedings of the International Electron Devices Meeting, Washington, D.C., 10-13 December 1995, p. 521.
2. L. Guo, E. Leobandung, and S. Y. Chou, Science 275, 649 (1997).
3. T. Gebel, L. Rebohle, J. Zhao, D. Borchert, H. Fröb, J. V. Borany, and W. Skorupa, Mater. Res. Soc. Symp. Proc. 638, F18.1 (2001).
4. F. Iacona, G. Franzò, and C. Spinella, J. Appl. Phys. 87, 1295 (2000).
5. F. Iacona, C. Bongiorno, C. Spinella, S. Boninelli, and F. Priolo, J. Appl. Phys. 95, 3723 (2004).
6. R. G. Barrera and R. Fuchs, Phys. Rev. B 52, 3256 (1995).
7. O. L. Krivanek, M. Kundmann, and X. Bourrat, Mater. Res. Soc. Symp. Proc. 332, 341 (1994).
8. M. Schmeitz, J. Phys. C 14, 1203 (1981).
9. R. F. Egerton, in Electron Energy-Loss Spectroscopy in the Electron Microscopy, 2nd ed. (Plenum, New York, 1996).