Effects of active layer thickness and thermal annealing on polythiophene: Fullerene bulk heterojunction photovoltaic devices

Applied Physics Letters

Volumn 97, Issue 5, 2010, Pages

  Zeng, Lichang ^a   Tang, Ching W ^a   Chen, Shaw H ^a,b  

^a University of Rochester   (United States)

^b UNIVERSITY OF ROCHESTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; BLEND FILMS; BULK HETEROJUNCTION PHOTOVOLTAIC DEVICES; BUTYRIC ACIDS; METHYL ESTERS; PHOTOCURRENT SPECTRAL RESPONSE; PHOTOVOLTAIC CHARACTERISTICS; PHOTOVOLTAIC DEVICES; POLY (3-HEXYLTHIOPHENE); POLY-THIOPHENE; THERMAL-ANNEALING;

ANNEALING; ESTERS; FATTY ACIDS; HETEROJUNCTIONS; PHASE SEPARATION; PHOTOVOLTAIC EFFECTS; SWITCHING CIRCUITS; THIN FILM DEVICES;

THICK FILM DEVICES;

EID: 77955757691     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3474654     Document Type: Article

References (19)

1. C. W. Tang, Appl. Phys. Lett. APPLAB 0003-6951 48, 183 (1986). 10.1063/1.96937 (Pubitemid 17615575)
2. G. Yu, J. Gao, J. C. Hummelen, F. Wudle, and A. J. Heeger, Science SCIEAS 0036-8075 270, 1789 (1995). 10.1126/science.270.5243.1789
3. F. Padinger, R. Rittberger, and N. Sariciftci, Adv. Funct. Mater. AFMDC6 1616-301X 13, 85 (2003). 10.1002/adfm.200390011
4. W. L. Ma, C. Y. Yang, X. Gong, K. Lee, and A. J. Heeger, Adv. Funct. Mater. AFMDC6 1616-301X 15, 1617 (2005). 10.1002/adfm.200500211 (Pubitemid 41454589)
5. G. Li, S. Shrotriya, J. S. Huang, Y. Yao, T. Moriarty, K. Emery, and Y. Yang, Nature Mater. NMAACR 1476-1122 4, 864 (2005). 10.1038/nmat1500
6. Y. Zhao, Z. Y. Xie, Y. Qu, Y. H. Geng, and L. X. Wang, Appl. Phys. Lett. APPLAB 0003-6951 90, 043504 (2007).
7. M. S. Kim, B. G. Kim, and J. S. Kim, ACS Appl, Mater. Interfaces 1, 1264 (2009). 10.1021/am900155y
8. A. J. Mouĺ, J. B. Bonekamp, and K. Meerholz, J. Appl. Phys. JAPIAU 0021-8979 100, 094503 (2006). 10.1063/1.2360780 (Pubitemid 44772642)
9. K. Sakai and M. Hiramoto, Mol. Cryst. Liq. Cryst. MCLCA5 0026-8941 491, 284 (2008). 10.1080/15421400802330960
10. V. Shrotriya, G. Li, Y. Yao, C. W. Chu, and Y. Yang, Appl. Phys. Lett. APPLAB 0003-6951 88, 073508 (2006). 10.1063/1.2174093 (Pubitemid 43261869)
11. E. Ahlswede, J. Hanisch, and M. Powalla, Appl. Phys. Lett. APPLAB 0003-6951 90, 163504 (2007). 10.1063/1.2723077 (Pubitemid 46644878)
12. L. S. Hung, C. W. Tang, and M. G. Mason, Appl. Phys. Lett. APPLAB 0003-6951 70, 152 (1997). 10.1063/1.118344
13. See supplementary material at http://dx.doi.org/10.1063/1.3474654 E-APPLAB-97-062031 for OPV device fabrication and characterization.
14. M. Campoy-Quiles, T. Ferenczi, T. Agostinelli, P. G. Etchegoin, Y. Kim, T. Anthopoulos, P. N. Stavrinou, D. D. C. Bradley, and J. Nelson, Nature Mater. NMAACR 1476-1122 7, 158 (2008). 10.1038/nmat2102 (Pubitemid 351161347)
15. Z. Xu, L. M. Chen, G. W. Yang, C. H. Huang, J. H. Hou, Y. Wu, G. Li, C. S. Hsu, and Y. Yang, Adv. Funct. Mater. AFMDC6 1616-301X 19, 1227 (2009). 10.1002/adfm.200801286
16. S. S. van Bavel, E. Sourty, G. de With, and J. Loos, Nano Lett. NALEFD 1530-6984 9, 507 (2009). 10.1021/nl8014022
17. M. Drees, R. M. Davis, and J. R. Heflin, Phys. Rev. B PLRBAQ 0556-2805 69, 165320 (2004). 10.1103/PhysRevB.69.165320
18. A. Kumar, G. Li, Z. R. Hong, and Y. Yang, Nanotechnology NNOTER 0957-4484 20, 165202 (2009). 10.1088/0957-4484/20/16/165202
19. H. Tachikawa, J. Phys. Chem. C JPCCCK 1932-7447 111, 13087 (2007). 10.1021/jp072451c (Pubitemid 47484966)