SCOPUS 정보 검색 플랫폼

Volumn 97, Issue 5, 2010, Pages

Vertical low-voltage oxide transistors gated by microporous SiO2 /LiCl composite solid electrolyte with enhanced electric-double-layer capacitance

(5) Jiang, Jie a,b Sun, Jia b Zhou, Bin b Lu, Aixia b Wan, Qing a,b

a NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING (China)

b HUNAN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITE SOLID ELECTROLYTES; DOUBLE-LAYER CAPACITANCE; HIGH CURRENTS; INDIUM TIN OXIDE; LOW-VOLTAGE; MICRO-POROUS; ON-OFF RATIO; OPERATION MECHANISM; OPERATION VOLTAGE; ROOM TEMPERATURE; SUBTHRESHOLD SWING;

CAPACITANCE; ELECTROCHEMICAL ELECTRODES; FIELD EFFECT TRANSISTORS; MESFET DEVICES; MICROPOROSITY; SILICON COMPOUNDS; TIN; TIN OXIDES; TITANIUM COMPOUNDS;

SOLID ELECTROLYTES;

EID: 77955755954 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3477949 Document Type: Article

Times cited : (13)

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