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Volumn 97, Issue 5, 2010, Pages

Quantum well saturable absorber mirror with electrical control of modulation depth

Author keywords

[No Author keywords available]

Indexed keywords

CENTRAL WAVELENGTH; ELECTRICAL CONTROL; INGAAS/GAAS; LOW-TEMPERATURE GROWN; MODULATION DEPTH; NON-LINEAR REFLECTIVITY; P-I-N STRUCTURE; PUMP FLUENCE; QUANTUM CONFINED STARK EFFECT; QUANTUM WELL; QUANTUM WELL SATURABLE ABSORBERS; REVERSE BIAS VOLTAGE; SEMICONDUCTOR SATURABLE ABSORBER MIRRORS; SMALL SIGNAL;

EID: 77955751407     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3474799     Document Type: Article
Times cited : (13)

References (17)
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  • 6
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  • 11
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    • OPEXFF 1094-4087,. 10.1364/OE.16.014004
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  • 13
    • 77955722948 scopus 로고    scopus 로고
    • In order to prevent the electric breakdown of the p-i-n structure, we limited the reverse bias to 2 V in all measurements, and the forward bias to 0.5 V in R (V,λ) measurements.
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  • 14
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    • DOI 10.1063/1.2400396
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  • 16
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    • OPLEDP 0146-9592,. 10.1364/OL.35.000913
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.