Quantum-dot-based saturable absorber with p-n junction for mode-locking of solid-state lasers

IEEE Photonics Technology Letters

Volumn 17, Issue 2, 2005, Pages 294-296

  Lagatsky, A A ^a   Rafailov, E U ^a   Sibbett, W ^a   Livshits, D A ^b   Zhukov, A E ^b   Ustinov, V M ^b  

^a UNIVERSITY OF ST ANDREWS   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Active mirror; Mode lock laser; Quantum dot (QD); Saturable absorber; Short pulse

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; LASER MODE LOCKING; MIRRORS; PHOTOLUMINESCENCE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SOLID STATE LASERS;

ACTIVE MIRROR; SATURABLE ABSORBER; SHORT PULSE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 13444274724     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.839387     Document Type: Article

References (9)

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