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Volumn 97, Issue 5, 2010, Pages
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Effect of n+ GaN cap polarization field on Cs-free GaN photocathode characteristics
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND ENGINEERING;
DEVICE PROPERTIES;
DEVICE SIMULATIONS;
EMISSION THRESHOLD;
GAN CAP;
GAN LAYERS;
PHOTOCATHODE SURFACES;
PHYSICS-BASED;
POLARIZATION FIELD;
POLARIZATION INDUCED CHARGES;
SI DELTA DOPING;
CESIUM;
DOPING (ADDITIVES);
GALLIUM NITRIDE;
HIGH ELECTRON MOBILITY TRANSISTORS;
PHOTOCATHODES;
PHOTOELECTRICITY;
POLARIZATION;
GALLIUM ALLOYS;
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EID: 77955726037
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.3476341 Document Type: Article |
Times cited : (18)
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References (9)
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