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Volumn 97, Issue 5, 2010, Pages

Effect of n+ GaN cap polarization field on Cs-free GaN photocathode characteristics

Author keywords

[No Author keywords available]

Indexed keywords

BAND ENGINEERING; DEVICE PROPERTIES; DEVICE SIMULATIONS; EMISSION THRESHOLD; GAN CAP; GAN LAYERS; PHOTOCATHODE SURFACES; PHYSICS-BASED; POLARIZATION FIELD; POLARIZATION INDUCED CHARGES; SI DELTA DOPING;

EID: 77955726037     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3476341     Document Type: Article
Times cited : (18)

References (9)
  • 4
    • 17944369420 scopus 로고    scopus 로고
    • GaN-based photocathodes with extremely high quantum efficiency
    • DOI 10.1063/1.1883707, 103511
    • S. Uchiyama, Y. Takagi, M. Niigaki, H. Kan, and H. Kondoh, Appl. Phys. Lett. APPLAB 0003-6951 86, 103511 (2005). 10.1063/1.1883707 (Pubitemid 40597145)
    • (2005) Applied Physics Letters , vol.86 , Issue.10 , pp. 1-3
    • Uchiyama, S.1    Takagi, Y.2    Niigaki, M.3    Kan, H.4    Kondoh, H.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.