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Thin Solid Films

Volumn 518, Issue 19, 2010, Pages 5576-5578

Nickel dissolution into AuGe in alloyed AuGe/Ni/Au Ohmic contacts on GaAs/AlGaAs multilayer structures

(3) Abhilash, T S a Ravi Kumar, C H a Rajaram, G a

a UNIVERSITY OF HYDERABAD (India)

Author keywords

AuGe Ni Au; GaAs AlGaAs; Magnetic properties; Multilayer; Ohmic contacts; Semiconductor; Sensors

Indexed keywords

ANNEAL TEMPERATURES; ANNEALED STRUCTURE; AUGE/NI/AU; CAP LAYERS; COMMONLY USED; EUTECTIC COMPOSITION; GAAS SUBSTRATES; GAAS/ALGAAS; GE CONTENT; LAYER THICKNESS; MAGNETIZATION DATA; MULTILAYER STRUCTURES; NICKEL DISSOLUTION; NONMAGNETICS; QUADRATIC DEPENDENCE; ROOM TEMPERATURE; SEMICONDUCTOR; TIME-SCALES;

ALLOYING; DISSOLUTION; ELECTRIC CONTACTORS; GALLIUM ALLOYS; GALLIUM ARSENIDE; GERMANIUM; MAGNETIC PROPERTIES; MAGNETISM; OHMIC CONTACTS; SEMICONDUCTING GALLIUM; SENSORS;

MAGNETIC MULTILAYERS;

EID: 77955657353 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.04.119 Document Type: Article

Times cited : (10)

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