A simple and accurate deep submicron mismatch model

European Solid-State Device Research Conference

Volumn , Issue , 2000, Pages 356-359

  Croon, J A ^a,b   Rosmeulen, M ^a,b   Decoutere, S ^a   Sansen, W ^b   Maes, H E ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; SOLID STATE DEVICES;

DEEP SUB-MICRON; M-TECHNOLOGIES; MISMATCH MODELING; MISMATCH PARAMETERS; PHYSICS-BASED; SIMPLE MODELING;

THRESHOLD VOLTAGE;

EID: 77955653961     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2000.194788     Document Type: Conference Paper

References (6)

1. F. Forti, M.E. Wright, "Measurement of MOS current mismatch in the weak inversion region," IEEE J. of Solid-State Circuits, vol. 29, no. 2, pp. 138-142, 1994
2. M. Denison, A. Pergoot, M. Tack, "Prediction of MOS matching in weak and moderate inversion from threshold matching in strong inversion," Proc. ESSDERC, pp. 648-651, 1998
3. J.A. Croon, M. Rosmeulen, S. Van Huylenbroeck, S. Decoutere, "A general model for MOS transistor matching," Proc. ESSDERC, pp. 464-467, 1999
4. J. Bastos, M. Steyaert, A. Pergoot, W. Sansen, "Mismatch characterization of submicron MOS transistors," Analog Integrated Circuits and Signal Processing, no. 12, pp. 95-106, 1997
5. T. Serrano-Gotarredona, B. Linares-Barranco, "A new five-parameter MOS transistor mismatch model," IEEE Electron Device Letters, vol. 21, no. 1, pp. 37-39, 2000
6. M.J.M. Pelgrom, A.C.J. Duinmaijer, A.P.G. Welbers, "Matching properties of MOS transistors," IEEE J. of Solid-State Circuits, vol. 24, no. 5, pp. 1433-1440, 1989